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| AF4978N N-Channel Enhancement Mode Power MOSFET Features - Low Gate Charge - Single Drive Requirement - Surface Mount Package - Pb Free Plating Product General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) 60 RDS(ON) (m) 100 ID (A) 11 Pin Assignments (Front View) Pin Descriptions Pin Name Description Source Gate Drain 3 2 1 D S S G D G Ordering information AX Feature F: MOSFET PN 4978N X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 6, 2005 1/5 AF4978N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25C TC=100C TC=25C Rating 60 25 11 6.8 45 21 0.17 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol RJC RJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum 6 110 Units C/W C/W Electrical Characteristics at TJ=25C unless otherwise specified Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 2) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=150oC) Gate-Source Leakage Total Gate Charge (Note 2) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 2) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=25V ID=5A, VDS=48V, VGS=4.5V VDS=30V, ID=5A, RG=3.3, VGS=10V RD=6 VGS=0V, VDS=25V, f=1.0MHz Min. 60 1 Typ. 0.04 7 6 2 3 6 11 14 2 485 55 40 Max. 100 125 3 10 uA 25 100 10 780 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=5A, VGS=0V IS=5A, VGS=0V, dl/dt=100A/s Min. Typ. 23 28 Max. 1.2 Unit V ns nC Note 1: Pulse width limited by Max. junction temperature. Note 2: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Sep 6, 2005 AF4978N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Sep 6, 2005 AF4978N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Sep 6, 2005 AF4978N N-Channel Enhancement Mode Power MOSFET Marking Information TO-252 ( Top View) Logo Part Number 4978N YYWWX YY : Year WW: Nth week X : Internal code ( Optional) Package Information Package Type: TO-252 D D1 E2 E3 B1 e A2 e R: 0.127~0.381 F1 A3 (0.1mm) 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A2 A3 B1 D D1 F F1 E1 E2 E3 e C Dimensions In Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65 Anachip Corp. www.anachip.com.tw 5/5 C F E1 Rev. 1.0 Sep 6, 2005 |
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